The spatial distribution of electron density modulated by an external lateral confinement potential is directly imaged, indicating the formation of a periodic quantum dot array. We describe PL microscopy and spectroscopy of modulation doped GaAs-GaAlAs quantum well structures using near-field scanning optical microscopy to image the electron density distribution modulated by an external bias voltage.


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    Title :

    Optical near-field spectroscopy of semiconductor nano-structures


    Contributors:
    Matsuda, K. (author) / Saiki, T. (author) / Saito, H. (author) / Nishi, K. (author) / Nomura, S. (author) / Aoyagi, Y. (author)


    Publication date :

    2001-01-01


    Size :

    200169 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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