Summary form only given, as follows. In this study, we present the results of optical studies of GaAs- and GaN-related structures using LT-NSOM. The optical properties were investigated over the temperature range of 4 to 300 K by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy using a single excitation source, combined with photo-modulated reflectance (PR) spectroscopy using separate pump and probe sources.


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    Title :

    Optical emission characteristics of GaAs and GaN structures using low temperature near-field scanning optical spectroscopy


    Contributors:
    Yong-Hoon Cho, (author) / Eah, S.K. (author) / Hohng, S.C. (author) / Kim, D.S. (author) / Yang, G.M. (author) / Song, J.J. (author) / Jhe, W. (author)


    Publication date :

    1999-01-01


    Size :

    116365 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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