GaN microLED devices with integrated microlenses have been demonstrated. The microlenses, with a focal length of 24 /spl mu/m and an r.m.s. roughness of /spl sim/ 1 nm, are fabricated on the polished backside of the sapphire substrate by inductively-coupled plasma (ICP) etching.


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    Title :

    GaN micro-LED arrays with integrated sapphire microlenses


    Contributors:
    Choi, H.W. (author) / Jeon, C.W. (author) / Liu, C. (author) / Dawson, M.D. (author)


    Publication date :

    2003-01-01


    Size :

    214967 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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