GaN microLED devices with integrated microlenses have been demonstrated. The microlenses, with a focal length of 24 /spl mu/m and an r.m.s. roughness of /spl sim/ 1 nm, are fabricated on the polished backside of the sapphire substrate by inductively-coupled plasma (ICP) etching.


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    Titel :

    GaN micro-LED arrays with integrated sapphire microlenses


    Beteiligte:
    Choi, H.W. (Autor:in) / Jeon, C.W. (Autor:in) / Liu, C. (Autor:in) / Dawson, M.D. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    214967 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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