Summary form only given. We present new spectroscopic results from MOMBE grown Er doped GaN. An overview of the PL from GaN:Er/sapphire observed under below-gap (442 nm) pumping is given. The near infrared PL peaking at 1.54 /spl mu/m is assigned to the intra-4f-subshell Er transition /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/. The red emission line at 668 nm is attributed to the Er/sup 3+/ transition /sup 4/F/sub 9/2//spl rarr//sup 4/I/sub 15/2/.


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    Title :

    Near IR and visible photoluminescence from Er doped III-nitride semiconductors


    Contributors:
    Thaik, M. (author) / Seo, J.T. (author) / Hommerich, U. (author) / Abernathy, C.R. (author) / Pearton, S.J. (author) / MacKenzie, J.D. (author) / Wilson, R.G. (author) / Zavada, J.M. (author)


    Publication date :

    1999-01-01


    Size :

    165027 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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