Summary form only given. We present new spectroscopic results from MOMBE grown Er doped GaN. An overview of the PL from GaN:Er/sapphire observed under below-gap (442 nm) pumping is given. The near infrared PL peaking at 1.54 /spl mu/m is assigned to the intra-4f-subshell Er transition /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/. The red emission line at 668 nm is attributed to the Er/sup 3+/ transition /sup 4/F/sub 9/2//spl rarr//sup 4/I/sub 15/2/.


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    Titel :

    Near IR and visible photoluminescence from Er doped III-nitride semiconductors


    Beteiligte:
    Thaik, M. (Autor:in) / Seo, J.T. (Autor:in) / Hommerich, U. (Autor:in) / Abernathy, C.R. (Autor:in) / Pearton, S.J. (Autor:in) / MacKenzie, J.D. (Autor:in) / Wilson, R.G. (Autor:in) / Zavada, J.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    165027 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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