Summary form only given. We present new spectroscopic results from MOMBE grown Er doped GaN. An overview of the PL from GaN:Er/sapphire observed under below-gap (442 nm) pumping is given. The near infrared PL peaking at 1.54 /spl mu/m is assigned to the intra-4f-subshell Er transition /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/. The red emission line at 668 nm is attributed to the Er/sup 3+/ transition /sup 4/F/sub 9/2//spl rarr//sup 4/I/sub 15/2/.
Near IR and visible photoluminescence from Er doped III-nitride semiconductors
01.01.1999
165027 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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