A new high density, high performance 16-Mb Static Random Access Memory (SRAM) is being developed in a 0.15¿m CMOS RH15 technology for use in space and other strategic radiation hardened applications. The SRAM design is implemented in a 1.5 Volt, 0.15 micron and seven-layer metal CMOS technology. Using integrated process features and advanced design techniques, a small cell size of 9.3 ¿m2 was utilized while achieving a SEU radiation hardness of less than 1E-12 upsets/bit-day and a worst-case chip performance of less than 15ns access time.


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    Title :

    A Radiation Hardened 16-Mb SRAM for Space Applications


    Contributors:
    Hoang, Tri (author) / Ross, Jason (author) / Doyle, Scott (author) / Rea, Dave (author) / Chan, Ernesto (author) / Neiderer, Wayne (author) / Bumgarner, Adam (author)


    Publication date :

    2007-03-01


    Size :

    2113514 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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