A new high density, high performance 16-Mb Static Random Access Memory (SRAM) is being developed in a 0.15¿m CMOS RH15 technology for use in space and other strategic radiation hardened applications. The SRAM design is implemented in a 1.5 Volt, 0.15 micron and seven-layer metal CMOS technology. Using integrated process features and advanced design techniques, a small cell size of 9.3 ¿m2 was utilized while achieving a SEU radiation hardness of less than 1E-12 upsets/bit-day and a worst-case chip performance of less than 15ns access time.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    A Radiation Hardened 16-Mb SRAM for Space Applications


    Beteiligte:
    Hoang, Tri (Autor:in) / Ross, Jason (Autor:in) / Doyle, Scott (Autor:in) / Rea, Dave (Autor:in) / Chan, Ernesto (Autor:in) / Neiderer, Wayne (Autor:in) / Bumgarner, Adam (Autor:in)


    Erscheinungsdatum :

    01.03.2007


    Format / Umfang :

    2113514 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Next generation radiation-hardened SRAM for space applications

    Hafer, C. / Mabra, J. / Slocum, D. et al. | IEEE | 2006


    Commercially fabricated radiation hardened 4Mbit SRAM

    Hafer, C. / Slocum, D. / Mabra, J. et al. | IEEE | 2004



    7.0301 Commercially Fabricated Radiation Hardened 4Mbit SRAM

    IEEE | British Library Conference Proceedings | 2004