We have reviewed the recent research carried out to realize all-epitaxial VCSELs at long wavelengths. Shortcomings of the InP materials system were overcome by the use of AsSb-based alloys for DBRs and multiple active regions to combat low gain materials. The inclusion of InP spreading layers was seen to greatly improve the thermal properties of the devices. Aperturing schemes were presented which will improve these already world-class devices.
InP-based 1310-1550 nm lattice-matched VCSELs
2001-01-01
239425 byte
Conference paper
Electronic Resource
English
WG1 InP-based 1310-1550 nm Lattice-Matched VCSELs
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