We have reviewed the recent research carried out to realize all-epitaxial VCSELs at long wavelengths. Shortcomings of the InP materials system were overcome by the use of AsSb-based alloys for DBRs and multiple active regions to combat low gain materials. The inclusion of InP spreading layers was seen to greatly improve the thermal properties of the devices. Aperturing schemes were presented which will improve these already world-class devices.


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    Titel :

    InP-based 1310-1550 nm lattice-matched VCSELs


    Beteiligte:
    Buell, D.A. (Autor:in) / Huntington, A.S. (Autor:in) / Koda, R. (Autor:in) / Hall, E. (Autor:in) / Nakagawa, S. (Autor:in) / Reddy, M. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    239425 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    WG1 InP-based 1310-1550 nm Lattice-Matched VCSELs

    IEEE | British Library Conference Proceedings | 2001


    Nr. 1310

    DataCite | 1870

    Freier Zugriff

    Temperature, Modulation and Reliability Characteristics of 1.3 mum-VCSELs on InP with AlGaInAs/InP Lattice Matched DBR

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004