In conclusion, we have demonstrated that uniform, native oxides can be formed on GaAs and AlGaAs materials using a pulsed voltage technique. It is a fast room temperature process which uses inexpensive standard lab equipment. AlGaAs diode lasers fabricated with the pulsed anodic technique had threshold currents substantially lower than deposited oxide devices.<>
AlGaAs lasers fabricated with pulsed anodic oxides
Proceedings of LEOS '93 ; 24-25
1993-01-01
195465 byte
Conference paper
Electronic Resource
English
AlGaAs Lasers Fabricated with Pulsed Anodic Oxides
British Library Conference Proceedings | 1993
|InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
IEEE | 2003
|InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
IEEE | 2003
|Interdiffusion in GaAs/AlGaAs Quantum Wells Using Anodic and Thermal Oxides of GaAs
British Library Conference Proceedings | 1998
|