The electro-absorption modulator integrated distributed feedback (DFB) laser is an attractive device for a high bit rate and long haul optical communication system due to its narrow modulated spectral linewidth compared to a direct drive laser diode. In this report we present the successful growth of InGaAsP/InGaAsP strain compensated MQW butt-coupled to MQW laser by using a thick InP buffer layer growth.


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    Title :

    Growth of defect-free butt-coupled InGaAsP/InGaAsP strain compensated multiple quantum well by metal-organic vapor phase epitaxy


    Contributors:


    Publication date :

    1996-01-01


    Size :

    338394 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Growth of Defect-Free Butt-Coupled InGaAsP/InGaAsP Strain Compensated Multiple Quantum Well by Metal-Organic Vapor Phase Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


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    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


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    Kuo, H. C. / Lu, T. C. / Chang, Y. S. et al. | British Library Conference Proceedings | 2003


    Synthesis of high-quality InGaAs/InGaAsP/InP quantum well structures by metalorganic vapor phase epitaxy [3211-10]

    Arora, B. M. / Gokhale, M. / Shah, A. P. et al. | British Library Conference Proceedings | 1997