The electro-absorption modulator integrated distributed feedback (DFB) laser is an attractive device for a high bit rate and long haul optical communication system due to its narrow modulated spectral linewidth compared to a direct drive laser diode. In this report we present the successful growth of InGaAsP/InGaAsP strain compensated MQW butt-coupled to MQW laser by using a thick InP buffer layer growth.


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    Titel :

    Growth of defect-free butt-coupled InGaAsP/InGaAsP strain compensated multiple quantum well by metal-organic vapor phase epitaxy


    Beteiligte:
    Seung Won Lee, (Autor:in) / Jeong Soo Kim, (Autor:in) / Eun Soo Nam, (Autor:in) / Chan Yong Park, (Autor:in) / Chong Dae Park, (Autor:in) / Hong Man Kim, (Autor:in) / Kwang Eui Pyun, (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    338394 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Growth of Defect-Free Butt-Coupled InGaAsP/InGaAsP Strain Compensated Multiple Quantum Well by Metal-Organic Vapor Phase Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001


    Growth and characterization of 850nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

    Kuo, H. C. / Lu, T. C. / Chang, Y. S. et al. | British Library Conference Proceedings | 2003


    Synthesis of high-quality InGaAs/InGaAsP/InP quantum well structures by metalorganic vapor phase epitaxy [3211-10]

    Arora, B. M. / Gokhale, M. / Shah, A. P. et al. | British Library Conference Proceedings | 1997