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    Titel :

    Growth and characterization of 850nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD



    Kongress:

    5th, Pacific Rim conference on lasers and electro-optics; photonics lights innovation: from nano-structures and devices to systems and networks ; 2003 ; Taipei, Taiwan



    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    1 pages


    Anmerkungen:

    Includes bibliographic references and author index



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch





    Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP-InGaP Strain-Compensated MQWs

    Chang, Y.-H. / Kuo, H. C. / Lai, F.-I. et al. | British Library Online Contents | 2004


    850nm VCSELs for 10Gb/s operation

    Iwai, N. / Yokouchi, N. / Kasukawa, A. | IEEE | 2002


    The law of wet oxidation rate in 850nm VCSELs

    Feng, Yuan / Liu, Guojun / Yan, Changling et al. | SPIE | 2015


    The law of wet oxidation rate in 850nm VCSELs [9521-15]

    British Library Conference Proceedings | 2015