We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is composed of a ridge-waveguide (RW) section followed by a trapezoidal amplifier. The width of both sections has been varied in order to study filamentation effects which have already been described in other material systems.
High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m
2005-01-01
180072 byte
Conference paper
Electronic Resource
English
Improved brightness using tapered diode lasers
IEEE | 2003
|High-brightness 1040-nm tapered diode lasers [4947-29]
British Library Conference Proceedings | 2003
|5.3 W CW high brightness 980-nm tapered diode lasers
IEEE | 2005
|High-Power High-Brightness Tapered Diode Lasers and Amplifiers for Eye-Safe Operation
British Library Conference Proceedings | 2004
|