We have presented the results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 /spl mu/m at 20/spl deg/C. The active layer of the samples consists of three compressively strained GaInSb - QWs, embedded in a broadened AlGaAsSb - waveguide structure. The lateral design is composed of a ridge-waveguide (RW) section followed by a trapezoidal amplifier. The width of both sections has been varied in order to study filamentation effects which have already been described in other material systems.


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    Titel :

    High-brightness GaSb-based tapered diode-lasers emitting at 1.9 /spl mu/m


    Beteiligte:
    Pfahler, C. (Autor:in) / Manz, C. (Autor:in) / Kaufel, G. (Autor:in) / Kelemen, M.T. (Autor:in) / Mikulla, M. (Autor:in) / Wagner, J. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    180072 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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