This study presents aluminum-free diode lasers that demonstrate high power conversion efficiency at 970 nm. Al-free active diode lasers, i.e. InGaAs(P)/InGaP/GaAs have superior power-conversion efficiency compared to conventional Al-containing devices due to their low differential series resistance and higher thermal conductivity.


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    Title :

    High power conversion efficiency 970 nm aluminum-free diode lasers


    Contributors:
    Kanskar, M. (author) / Dai, Z. (author) / Earles, T. (author) / Forbes, D. (author) / Goodnough, T. (author) / Nesnidal, M. (author) / Stiers, E. (author)


    Publication date :

    2004-01-01


    Size :

    140911 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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