This study presents aluminum-free diode lasers that demonstrate high power conversion efficiency at 970 nm. Al-free active diode lasers, i.e. InGaAs(P)/InGaP/GaAs have superior power-conversion efficiency compared to conventional Al-containing devices due to their low differential series resistance and higher thermal conductivity.


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    Titel :

    High power conversion efficiency 970 nm aluminum-free diode lasers


    Beteiligte:
    Kanskar, M. (Autor:in) / Dai, Z. (Autor:in) / Earles, T. (Autor:in) / Forbes, D. (Autor:in) / Goodnough, T. (Autor:in) / Nesnidal, M. (Autor:in) / Stiers, E. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    140911 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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