A quantum well intermixing technique in GaAs/AlGaAs structure is developed for band-gap tuned lasers. This technique employs a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process.
One-step rapid thermal process for bandgap tuned lasers in GaAs/AlGaAs structure
2001-01-01
153385 byte
Conference paper
Electronic Resource
English
One-Step Rapid Thermal Process for Bandgap Tuned Lasers in GaAs/AlGaAs Structure
British Library Conference Proceedings | 2001
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