A quantum well intermixing technique in GaAs/AlGaAs structure is developed for band-gap tuned lasers. This technique employs a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process.


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    Titel :

    One-step rapid thermal process for bandgap tuned lasers in GaAs/AlGaAs structure


    Beteiligte:
    Ng, S.L. (Autor:in) / Ooi, B.S. (Autor:in) / Lam, Y.L. (Autor:in) / Chan, Y.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    153385 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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