1.55 /spl mu/m AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T/sub 0/ and high injection efficiency.


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    Title :

    Temperature dependent performance of 1.55 /spl mu/m AlGaInAs laser diodes


    Contributors:
    Yang, C. (author) / Stinz, A. (author) / Lester, L. (author) / Malloy, K.J. (author)


    Publication date :

    2005-01-01


    Size :

    458431 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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