We report chirp values reduced to the information bandwidth (0.1 nm) on 10 Gb1s operating InGaAslInGaAbAs MQW DFB lasers. A very low linewidth enhancementfactor of 1.8 was estimated above threshold by injection locking methods.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High speed ultra-low chirp 1.55/spl mu/m GaInAs/AlGaInAs MQW BRS DFB lasers


    Contributors:
    Blez, M. (author) / Kazmierski, C. (author) / Mathoorasing, D. (author) / Quillec, M. (author) / Gilleron, M. (author) / Landreau, J. (author) / Nakajima, H. (author)


    Publication date :

    1992-01-01


    Size :

    211692 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High Speed Ultra-Low Chirp 1.55 m GaInAs/AlGaInAs MQW BRS DFB Lasers

    Blez, M. / Kazmierski, C. / Mathoorasing, D. et al. | British Library Conference Proceedings | 1992



    Temperature Dependent Performance of 1.55 mum AlGaInAs Laser Diodes

    Yang, C. | British Library Conference Proceedings | 2005



    Proposal of an AlAs-Oxide Current Confinement Structure for GaInAs/AlGaInAs Long Wavelength Surface Emitting Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996