1.55 /spl mu/m wavelength distributed feedback (DFB) lasers consisting of a first order vertical grating formed on the sidewalls of the high-mesa stripe geometry were realized by a simple electron beam lithography and CH/sub 4//H/sub 2/-RIE etching. The threshold current of 15 mA and the differential quantum efficiency of 55% were obtained for a 370 /spl mu/m long and 3.5 /spl mu/m wide stripe device.


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    Title :

    1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating


    Contributors:
    Hyo-Chang Kim, (author) / Wiedmarm, J. (author) / Matsui, K. (author) / Tamura, S. (author) / Arai, S. (author)


    Publication date :

    2001-01-01


    Size :

    206967 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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