Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.


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    Title :

    InGaN MQW laser diode with integrated intracavity electroabsorption modulator


    Contributors:
    Kneissl, M. (author) / Paoli, T.L. (author) / Kiesel, P. (author) / Treat, D.W. (author) / Teepe, M. (author) / Miyashita, N. (author) / Johnson, N.M. (author)


    Publication date :

    2002-01-01


    Size :

    114813 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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