Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.
InGaN MQW laser diode with integrated intracavity electroabsorption modulator
2002-01-01
114813 byte
Conference paper
Electronic Resource
English
InGaN MQW Laser Diode with Integrated Intracavity Electroabsorption Modulator
British Library Conference Proceedings | 2002
|Stacked-diode Electroabsorption Modulator
British Library Conference Proceedings | 1994
|DFB lasers with integrated electroabsorption modulator
British Library Online Contents | 1996
|Integrated DFB Laser-electroabsorption Modulator Using Selective-area MOVPE
British Library Online Contents | 1993
|