Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.
InGaN MQW laser diode with integrated intracavity electroabsorption modulator
01.01.2002
114813 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaN MQW Laser Diode with Integrated Intracavity Electroabsorption Modulator
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