Quantum dot infrared photodetectors (QDIP) are at the center of research interest nowadays. However, the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development.


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    Title :

    Optimization of InGaAs quantum dots for optoelectronic applications


    Contributors:
    Ruifei Duan (author) / Baoqiang Wang (author) / Zhanping Zhu (author) / Yiping Zeng (author)


    Publication date :

    2002-01-01


    Size :

    130663 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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