Quantum dot infrared photodetectors (QDIP) are at the center of research interest nowadays. However, the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development.


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    Titel :

    Optimization of InGaAs quantum dots for optoelectronic applications


    Beteiligte:
    Ruifei Duan, (Autor:in) / Baoqiang Wang, (Autor:in) / Zhanping Zhu, (Autor:in) / Yiping Zeng, (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    130663 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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