We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.


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    Title :

    Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology


    Contributors:
    Rosales, M. D. (author) / Polleux, J.-L (author) / Algani, C. (author)


    Publication date :

    2011-09-01


    Size :

    185092 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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