We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
2011-09-01
185092 byte
Conference paper
Electronic Resource
English
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