We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
01.09.2011
185092 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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