A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl/sub 2/ inductively coupled plasma (ICP).


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    Title :

    Surface treatment of inductively coupled plasma on p-GaN


    Contributors:
    Tseng, C.T. (author) / Su, S.H. (author) / Yokoyama, M. (author) / Chen, S.M. (author)


    Publication date :

    2003-01-01


    Size :

    53899 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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