A reduction of Ni/Au ohmic contact on p-type GaN is obtained by surface treatment using Cl/sub 2/ inductively coupled plasma (ICP).


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    Titel :

    Surface treatment of inductively coupled plasma on p-GaN


    Beteiligte:
    Tseng, C.T. (Autor:in) / Su, S.H. (Autor:in) / Yokoyama, M. (Autor:in) / Chen, S.M. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    53899 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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