The compressively strained MQW structures for a 650 nm laser diode were investigated. The high performance was obtained with a metal clad ridge structure employing strained MQWs.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode


    Contributors:
    Oh, M. (author) / Park, H. (author) / Lee, C. (author) / Lim, G. (author) / Kim, T. (author) / Kim, J. (author)


    Publication date :

    1995-01-01


    Size :

    154529 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Compressively Strained GaInP/AlGaInP Metal Clad Structure for 650nm Laser Diode

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    670 nm AlGaInP/GaInP strained multi-quantum well laser diode with high characteristic temperature (T~o)

    Kim, J.-S. / Yang, M. / Choi, W.-J. et al. | British Library Online Contents | 1995


    Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers

    Moritz, A. / Wirth, R. / Heppel, S. et al. | IEEE | 1996


    Sustained oscillations in GaInP/AlGaInP visible diode lasers

    Tatum, J. A. / MacFarlane, D. L. / Serreze, H. B. | British Library Online Contents | 1995


    Intrinsic Modulation Bandwidth of Strained GaInP/AlGaInP Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996