The compressively strained MQW structures for a 650 nm laser diode were investigated. The high performance was obtained with a metal clad ridge structure employing strained MQWs.
Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode
1995-01-01
154529 byte
Conference paper
Electronic Resource
English
Compressively Strained GaInP/AlGaInP Metal Clad Structure for 650nm Laser Diode
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