The compressively strained MQW structures for a 650 nm laser diode were investigated. The high performance was obtained with a metal clad ridge structure employing strained MQWs.


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    Titel :

    Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode


    Beteiligte:
    Oh, M. (Autor:in) / Park, H. (Autor:in) / Lee, C. (Autor:in) / Lim, G. (Autor:in) / Kim, T. (Autor:in) / Kim, J. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    154529 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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