We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at 1.3μm. Opto-electronic confinement provided by an InGaP layer results in single lateral mode emission.
1.3μm Quantum Dot Self-Aligned Stripe Laser
2008-12-01
3514658 byte
Conference paper
Electronic Resource
English
Self-aligned processing techniques for semiconductor stripe lasers [2886-534]
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British Library Conference Proceedings | 1996
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