We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at 1.3μm. Opto-electronic confinement provided by an InGaP layer results in single lateral mode emission.
1.3μm Quantum Dot Self-Aligned Stripe Laser
01.12.2008
3514658 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Self-aligned processing techniques for semiconductor stripe lasers [2886-534]
British Library Conference Proceedings | 1996
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British Library Conference Proceedings | 1996
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