Summary form only given. We realized 1.3 /spl mu/m-wide mesa stripe GaInAsP/InP distributed reflector semiconductor lasers consisting of first-order vertical grating DFB and first-order deeply etched DBR, and obtained a threshold current of 3.6mA for the active region length of 21/spl mu/m.
Narrow stripe distributed reflector lasers with first-order vertical grating
2002-01-01
130301 byte
Conference paper
Electronic Resource
English
Narrow Stripe Distributed Reflector Lasers with First-Order Vertical Grating
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