Summary form only given. We realized 1.3 /spl mu/m-wide mesa stripe GaInAsP/InP distributed reflector semiconductor lasers consisting of first-order vertical grating DFB and first-order deeply etched DBR, and obtained a threshold current of 3.6mA for the active region length of 21/spl mu/m.


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    Title :

    Narrow stripe distributed reflector lasers with first-order vertical grating


    Contributors:
    Hyo-Chang Kim, (author) / Kanjo, H. (author) / Tamura, S. (author) / Arai, S. (author)


    Publication date :

    2002-01-01


    Size :

    130301 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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