Summary form only given. Using GaInAsSb-GaSb type-II quantum wells, room temperature, broad area lasers with a pulsed threshold current density of approximately 300A/cm/sup 2/ have been demonstrated. We present the CW operation of GaInAsSb-GaSb type-II quantum well ridge lasers at a wavelength of 2.36 /spl mu/m near room temperature. The energy band diagram of the MBE-grown structure is shown.


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    Title :

    Continuous-wave operation of GaInAsSb/GaSb type-II quantum well lasers near room temperature


    Contributors:
    Keo, S.A. (author) / Dougherty, D. (author) / Young, M.G. (author) / Forouhar, S. (author) / Nicolas, J.-C. (author) / Baranov, A.N. (author)


    Publication date :

    1998-01-01


    Size :

    137639 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Continuous-Wave Operation of GaInAsSb/GaSb Type-II Quantum Well Lasers Near Room Temperature

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



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