Summary form only given. Using GaInAsSb-GaSb type-II quantum wells, room temperature, broad area lasers with a pulsed threshold current density of approximately 300A/cm/sup 2/ have been demonstrated. We present the CW operation of GaInAsSb-GaSb type-II quantum well ridge lasers at a wavelength of 2.36 /spl mu/m near room temperature. The energy band diagram of the MBE-grown structure is shown.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Continuous-wave operation of GaInAsSb/GaSb type-II quantum well lasers near room temperature


    Beteiligte:
    Keo, S.A. (Autor:in) / Dougherty, D. (Autor:in) / Young, M.G. (Autor:in) / Forouhar, S. (Autor:in) / Nicolas, J.-C. (Autor:in) / Baranov, A.N. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    137639 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Continuous-Wave Operation of GaInAsSb/GaSb Type-II Quantum Well Lasers Near Room Temperature

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



    Room temperature continuous wave operation of quantum cascade lasers

    Hofstetter, D. / Beck, M. / Aellen, T. et al. | IEEE | 2002


    Continuous-Wave, Room-Temperature Quantum Cascade Lasers

    Falst, J. | British Library Online Contents | 2006