This paper presents a review on the properties of rare earth (RE) lumophores incorporated in selected inorganic hosts and secondarily in organic materials. The main RE lumophore-host combination discussed involves the use of the wide bandgap semiconductor GaN and related family of III-N (AlN/GaN/InN) compounds and alloys. The relationship between the fabrication technique, material properties and related light emitting device characteristics are also described.


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    Title :

    Light emission from rare earth lumophores in inorganic and organic hosts


    Contributors:


    Publication date :

    2005-01-01


    Size :

    322075 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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