This paper presents a review on the properties of rare earth (RE) lumophores incorporated in selected inorganic hosts and secondarily in organic materials. The main RE lumophore-host combination discussed involves the use of the wide bandgap semiconductor GaN and related family of III-N (AlN/GaN/InN) compounds and alloys. The relationship between the fabrication technique, material properties and related light emitting device characteristics are also described.
Light emission from rare earth lumophores in inorganic and organic hosts
2005-01-01
322075 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Light Emission from Rare Earth Lumophores in Inorganic and Organic Hosts
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