Threshold current densities as low as 370-440 A/cm/sup 2/ and differential quantum efficiencies of 26-32% have been obtained for air-post index-guided bottom-emitting InGaAs VCSELs using a periodic gain 2/spl lambda/ active structure. The low threshold current densities with high differential quantum efficiencies suggest that the periodic gain active structure is useful in improving threshold characteristics of VCSELs without deteriorating output power characteristics.
Periodic gain surface-emitting lasers with low threshold current densities
Proceedings of LEOS'94 ; 1 ; 254-255 vol.1
1994-01-01
139151 byte
Conference paper
Electronic Resource
English
Periodic Gain Surface-Emitting Lasers with Low Threshold Current Densities
British Library Conference Proceedings | 1994
|British Library Conference Proceedings | 1996
|Thin-film III-V lasers bonded to silicon have low threshold-current densities
British Library Online Contents | 2009