Threshold current densities as low as 370-440 A/cm/sup 2/ and differential quantum efficiencies of 26-32% have been obtained for air-post index-guided bottom-emitting InGaAs VCSELs using a periodic gain 2/spl lambda/ active structure. The low threshold current densities with high differential quantum efficiencies suggest that the periodic gain active structure is useful in improving threshold characteristics of VCSELs without deteriorating output power characteristics.


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    Titel :

    Periodic gain surface-emitting lasers with low threshold current densities


    Beteiligte:
    Byueng-Su Yoo (Autor:in) / Hyo-Hoon Park (Autor:in) / El-Hang Lee (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 254-255 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    139151 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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