In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (Ill)substrate and its IR gain spectrum under current injection. In a strained epitaxial layer oriented in the [111] direction, assuming that there are no free charges in the strained layer there is a strain-induced piezoelectric field.


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    Title :

    Active space division switch fabrics using semiconductor optical amplifiers


    Contributors:
    Kim, S. (author) / Gopinath, A. (author)


    Publication date :

    1997-01-01


    Size :

    194160 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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