In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (Ill)substrate and its IR gain spectrum under current injection. In a strained epitaxial layer oriented in the [111] direction, assuming that there are no free charges in the strained layer there is a strain-induced piezoelectric field.
Active space division switch fabrics using semiconductor optical amplifiers
01.01.1997
194160 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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