In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (Ill)substrate and its IR gain spectrum under current injection. In a strained epitaxial layer oriented in the [111] direction, assuming that there are no free charges in the strained layer there is a strain-induced piezoelectric field.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Active space division switch fabrics using semiconductor optical amplifiers


    Beteiligte:
    Kim, S. (Autor:in) / Gopinath, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    194160 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Active Space Division Switch Fabrics Using Semiconductor Optical Amplifiers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    High-Speed Optical Time-Division Demultiplexer Using Semiconductor Optical Amplifiers

    Ali, M. A. / Elrefaie, A. F. / Issa, H. et al. | British Library Online Contents | 1992



    Wavelength Division Bidirectional Optical Cross-Connection Experiment Using Semiconductor Optical Amplifiers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Hybrid Optical Switch Using Passive Polymer Waveguides and Semiconductor Optical Amplifiers

    Fan, R. S. / Hooker, R. B. | British Library Online Contents | 2000