Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied high-density dot layers enabled us to achieve the threshold current 8 mA.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature


    Contributors:
    Mukai, K. (author) / Nakata, Y. (author) / Otsubo, K. (author) / Sugawara, M. (author) / Yokoyama, N. (author) / Ishikawa, H. (author)


    Publication date :

    1999-01-01


    Size :

    135868 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English