Defects were investigated in undoped GaN and AlGaN epilayers grown on Al/sub 2/O/sub 3/ substrates by metal organic vapor phase epitaxy. Threading dislocations (TDs) and horizontal dislocations (HDs) in GaN were imaged and classified into different types. Precipitates and their punching out dislocations were recognized in undoped AlGaN. Defects at AlGaN/GaN interface are analyzed to result from compressive stress.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Defects in III nitrides


    Contributors:


    Publication date :

    2003-01-01


    Size :

    405895 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Defects in III Nitrides

    Kang, J. | British Library Conference Proceedings | 2003



    III-V Nitrides For Optical Emitters

    Morkoc, H. | IEEE | 1994



    III-V Nitrides for Optical Emitters

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994