Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC.


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    Title :

    Recent progress in GaN/SiC LEDs and photopumped lasers


    Contributors:
    Bulman, G.E. (author) / Edmond, J.A. (author) / Kong, H.S. (author) / Leonard, M. (author) / Dmitriev, V.A. (author) / Irvine, K.G. (author) / Nikolaev, V.I. (author) / Zubrilov, A.S. (author) / Tsvetkov, D.V. (author)


    Publication date :

    1995-01-01


    Size :

    178598 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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