Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC.


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    Titel :

    Recent progress in GaN/SiC LEDs and photopumped lasers


    Beteiligte:
    Bulman, G.E. (Autor:in) / Edmond, J.A. (Autor:in) / Kong, H.S. (Autor:in) / Leonard, M. (Autor:in) / Dmitriev, V.A. (Autor:in) / Irvine, K.G. (Autor:in) / Nikolaev, V.I. (Autor:in) / Zubrilov, A.S. (Autor:in) / Tsvetkov, D.V. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    178598 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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