For 1.5/spl mu/m wavelength, a high gain of 15 dB under polarization insensitive operation has been demonstrated by a newly developed semiconductor optical amplifier with a small tensile strain (0.2%) introduced to 8 nm-thick quantum wells. TE and TM mode gain characteristics have been investigated as a function of device length and strain.
Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures
1992-01-01
139202 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1992
|Polarization-Insensitive Optical Amplifiers Using Tensile-Strained Quantum Wells
British Library Conference Proceedings | 1993
|Polarization-Insensitive SOAs Using Strained Bulk Active Regions
British Library Online Contents | 2006
|British Library Online Contents | 2003
|