For 1.5/spl mu/m wavelength, a high gain of 15 dB under polarization insensitive operation has been demonstrated by a newly developed semiconductor optical amplifier with a small tensile strain (0.2%) introduced to 8 nm-thick quantum wells. TE and TM mode gain characteristics have been investigated as a function of device length and strain.


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    Titel :

    Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures


    Beteiligte:
    Horikawa, H. (Autor:in) / Xu, C.Q. (Autor:in) / Yamada, K. (Autor:in) / Katoh, Y. (Autor:in) / Kamijoh, T. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    139202 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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