For 1.5/spl mu/m wavelength, a high gain of 15 dB under polarization insensitive operation has been demonstrated by a newly developed semiconductor optical amplifier with a small tensile strain (0.2%) introduced to 8 nm-thick quantum wells. TE and TM mode gain characteristics have been investigated as a function of device length and strain.


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    Titel :

    Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures


    Beteiligte:
    Jorna, M. (Autor:in) / Horikawa, H. (Autor:in) / Xu, C.Q. (Autor:in) / Yamada, K. (Autor:in) / Katoh, Y. (Autor:in) / Kamijoh, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1992


    Format / Umfang :

    139202 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Polarization Insensitive Amplification at 1.5 m Wavelength Using Tensile Strained Multiple Quantum Well Structures

    Joma, M. / Horikawa, H. / Xu, C. Q. et al. | British Library Conference Proceedings | 1992


    Polarization-Insensitive Optical Amplifiers Using Tensile-Strained Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Polarization-insensitive optical amplifiers using tensile-strained quantum wells

    Kamijoh, T. / Horikawa, H. / Nakajima, M. et al. | IEEE | 1993


    Polarization-Insensitive SOAs Using Strained Bulk Active Regions

    Michie, C. / Kelly, A. E. / McGeough, J. et al. | British Library Online Contents | 2006